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HT100008OJ6 - 800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier

HT100008OJ6_118423.PDF Datasheet


 Full text search : 800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier


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PART Description Maker
A290021T-120 A290021TL-55 A290021T-90 A290021TL-12 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K × 8位CMOS 5.0伏只,引导扇区闪
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MB 32C 32#20 SKT RECP
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
MB 6C 6#20 PIN RECP
Reed Switch; Pull-In Amp Turns Max:20; Pull-In Amp Turns Min:10; Circuitry:SPST-NO; Switching Current Max:0.5A; Switching Voltage Max:200V; Mounting Type:Surface Mount; Contact Rating:10 VA; Supply Current:1.5A RoHS Compliant: Yes
RELAY, REED SPDT 12VDC
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Limit Switch,VERTICAL R/A,SPDT,ON-(ON),QUICK CONNECT Terminal,SIMULATED ROLLER
SWITCHES
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
AMIC Technology, Corp.
AMIC Technology Corporation
X5165PI X5163V14I-2.7T1 X5165V14-2.7T1 X5165V14I-2 CPU Supervisor with 16Kbit SPI EEPROM Description
THYRISTOR MODULE, 95A, 0800V; Thyristor/Triac type:Thyristor; Voltage, Vdrm:800V; Current, It rms:150A; Current, Itsm:2000A; Current, Igt:150mA; Voltage, Vgt:3.0V; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, It av:95A; RoHS Compliant: Yes
RTC Module With CPU Supervisor
; Repetitive Reverse Voltage Max, Vrrm:1600V; Current, It av:70A; Forward Current:125A; Operating Temp. Max:125 ; Package/Case:SEMIPACK 1; Peak
http://
Intersil Corporation
STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66

STR-BS6301 STRS6301 STR-S6301 Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
Sanken Electric Co.,Ltd.
X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
Intersil, Corp.
XICOR[Xicor Inc.]
FQA8N80C 800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
STB4NB80 STB4NB80FP 5976 N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条,TO-220/TO-220FP PowerMESHTM MOSFET的(不适用沟道MOSFET的)
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
NX8341UH-AZ NX8341UN-AZ PLIERS, COMBINATION REDLINE 200MMPLIERS, COMBINATION REDLINE 200MM; Jaw type:Combination; Length:200mm; Handle type:High grip; Capacity, cutting hard wire:2.0mm; Capacity, jaw max:2mm; Joint Construction:lap; Length, jaw:44mm; Width,
NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
California Eastern Laboratories
FAN2502S26 FAN2503S25 THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
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Fairchild Semiconductor, Corp.
3M Company
IRFPE40 IRFPE40PBF 800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
International Rectifier
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
 
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HT100008OJ6 Amplifier HT100008OJ6 equivalent ic HT100008OJ6 step HT100008OJ6 inductors HT100008OJ6 Capacitor
 

 

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